t4 - lds -0 168 -1, rev . 1 (1 2 0776 ) ?201 2 microsemi corporation page 1 of 5 1n580 7 us , 1n5809 us, 1n58 11 us and urs available on commercial versions void -less hermetically sealed ultrafast recovery glass rectifiers qualified per mil -prf- 19500/477 qualified levels : jan, jantx, jantxv and jans description this ultrafast recovery rectifier diode series is military qualified and is i deal for high - reliability applications where a failure cannot be tolerated. the industry - recognized 6.0 a mp rated rectifiers with working peak reverse voltage s fr om 50 to 150 volts are hermetically sealed with void - less glass construction using an internal category 1 metallurgical bond. these devices are available in both surface mount melf and leaded package configurations. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recov ery time requirements including standard, fast and ultrafast device types in both through - hole and surface mount packages. b melf package (us) b melf packag e (urs) also available in : b package ( axial - leaded ) 1n5807, 09 and 11 important: for the latest information, visit our website http:/ /www.microsemi.com . features ? jedec registered surface mount equivalent of 1n5 80 7 , 1n580 9 , 1n58 11 series . ? v oid - less hermetically sealed glass package . ? quadruple - layer passivation. ? extremely robust construction. ? internal category 1 metallurgical bon ds. ? jan, jantx, jantxv and jans qualifi cations are avail a ble per mil - prf - 19500/477 . ? rohs compliant versions available (commercial grade only) . applications / benefits ? ultrafast recovery 6 amp rectifier series from 50 to 150 v. ? military, s pace and other high - reliability applications. ? switching power supplies or other applications requiring extremely fast switching & lo w forward loss. ? high forward surge current capability. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise specified msc C law rence 6 lake street, lawrence, ma 0184 1 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t st g - 65 to +175 o c thermal resistance junction - to - end cap fig ure 1 r ? j ec 6.5 o c /w thermal resist ance r ? jx 52 o c /w working peak reverse voltage: 1n580 7 1n580 9 1n5811 v rw m 50 100 150 v forward surge current (3) i fsm 12 5 a average rectified output current @ t l = +75 o c at 3/8 inch lead length (1) i o1 6.0 a average rectified output - current @ t a = + 5 5 o c at 3/8 inch lead length (2) i o2 3. 0 a capacitance @ v r = 10 v, f = 1 mhz; vsig = 50 mv (p - p) c j 60 pf reverse recovery time (4) t rr 30 ns solder temperature @ 10 s t sp 260 o c notes : 1. i o1 is r ated at t ec = 75 c. derate at 60 ma/oc for t ec above 75 oc . 2. i o2 is de rated at 25 ma /oc above t a = 55 o c for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(ma x) 175 o c is not exceeded. 3. t a = 25 o c @ i o = 3 .0 a a nd v rwm for ten 8.3 ms surges at 1 minute intervals. 4. i f = 1.0 a, i rm = 1.0 a, i r(rec) = . 0.10 a and di/dt = 100 a/ s min . downloaded from: http:///
t4 - lds -0 168 -1, rev . 1 (1 2 0776 ) ?201 2 microsemi corporation page 2 of 5 1n580 7 us , 1n5809 us, 1n58 11 us and urs mechanical and packaging ? case: hermetically sealed void - less hard glass with t ungsten slugs. ? terminal s: tin/ l ead (sn/pb) or rohs compliant matte/ t in (commercial grade only) over ni ckel plate over c opper. ? marking: body coated in blue with part number . ? polarity: cathode indicated by band. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? weight : 539 milligrams. ? see p ackage d imensions on last page. part nomenclature jan 1n 580 7 us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characteristics table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package type us = 2 square end caps urs = 1 square + 1 round end cap symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range . i o average rectified output current: output c urrent a veraged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle . v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified cur rent . i r maximum leakage current: the maximum leakage current that will flow at the specified voltage and t emperature . c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage . t rr r everse recovery time: the time interval between the instant the current passes through zero when changing fr om the forward direction to the reverse direction and a specified recovery decay point after a peak reverse cur rent occurs. electrical charac teristics @ t a = 25 oc unless otherwise stated breakdown voltage (min.) @ 100 a v (br) maximum forward voltage @ 4 a ( 8.3 ms pulse ) v fm reverse current (max.) @ v rwm i r surge current (max) i fsm (note 1) reverse recovery time (max) t rr (note 2 ) type volts volts a amps ns 25 o c 125 o c 25 o c 125 o c 1n5807 60 0.875 0.800 5 525 125 30 1n5809 110 0.875 0.800 5 525 125 30 1n5811 160 0.875 0.800 5 525 125 30 notes: 1. t a = 25 o c @ i o = 3 .0 a and v rwm for ten 8.3 ms surges at 1 minute i ntervals . 2. i f = 1.0 a, i rm = 1.0 a, i r(rec) = 0.10 a and di/dt = 100 a/ s min . downloaded from: http:///
t4 - lds -0 168 -1, rev . 1 (1 2 0776 ) ?201 2 microsemi corporation page 3 of 5 1n580 7 us , 1n5809 us, 1n58 11 us and urs graphs heating time (sec) figure 1 maximum thermal impedance i o (a) figure 2 rectifier p ower vs i o (a verage f orward c urrent) theta ( o c/w ) p o (w) downloaded from: http:///
t4 - lds -0 168 -1, rev . 1 (1 2 0776 ) ?201 2 microsemi corporation page 4 of 5 1n580 7 us , 1n5809 us, 1n58 11 us and urs graphs (continued) pad ar ea per pad ( sq in) figure 3 thermal r esistance vs fr4 p ad a rea a t a mbient pcb horizontal (for each pad) with 1, 2, and 3 oz copper v f (v) figure 4 forward v oltage vs f orward c urrent i f (v) thermal resistance ( o c/w ) downloaded from: http:///
t4 - lds -0 168 -1, rev . 1 (1 2 0776 ) ?201 2 microsemi corporation page 5 of 5 1n580 7 us , 1n5809 us, 1n58 11 us and urs package dimensions notes: 1. dimensions are in inches. 2. millime ters are given for general information only. 3. dimensions are pre - solder dip. 4. minimum clearance of glass body to mounting surface on all orientations. 5. cathode marking to be either in color band, three dots spaced equally or a color do t on the face of the end tab. 6. color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab shall not lie within .020 inch (0 .51 mm) of the mounting surface. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. 8. on urs one end cap shall be square and the other end cap shall be round. dimensions ltr inch millimeters notes min max min max bd .137 .148 3.48 3.76 8 bl .200 .225 5.08 5.72 ect .019 .028 0.48 0.71 8 s .003 0.08 pad layout note : if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. dim inch millimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 downloaded from: http:///
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